JANSR2N7410 Datasheet (Intersil Corporation) - 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7410, 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined

JANSR2N7410 Features

* 3.5A, 100V, rDS(ON) = 0.600Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose R