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RFD16N06SM - N-Channel Power MOSFET

Description

These N-Channel power MOSFETs are manufactured using the MegaFET process.

This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 16A, 60V.
  • rDS(ON) = 0.047Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFD16 N06, RFD16 N06SM) /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- Symbol Orderi.

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Datasheet Details

Part number RFD16N06SM
Manufacturer Intersil Corporation
File Size 85.04 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFD16N06SM Datasheet
Additional preview pages of the RFD16N06SM datasheet.

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Full PDF Text Transcription

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Semiconductor RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. September 1998 Features • 16A, 60V • rDS(ON) = 0.
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