KHB9D0N50F1 Datasheet - KEC semiconductor

KHB9D0N50F1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB9D0N50P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C.

KHB9D0N50F1 Features

* VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+

KHB9D0N50F1 Datasheet (105.13 KB)