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KHB9D0N50F1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs

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Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number
KHB9D0N50F1
Manufacturer
KEC semiconductor
File Size
105.13 KB
Datasheet
KHB9D0N50F1_KECsemiconductor.pdf
Description
(KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs

Features

* VDSS(Min. )= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ. ) =34.6nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+

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