KHB9D5N20F1 - (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

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Datasheet Details

Part number	KHB9D5N20F1
Manufacturer	KEC
File Size	526.19 KB
Description	(KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet	KHB9D5N20F1_KEC.pdf

KHB9D5N20F1 Product details

Description

A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.It is mainly suitable for electronic ballast and switch mode power supplies.

Features

VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB.

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Published: Oct 3, 2007 |