Part number:
KHB9D0N90NA
Manufacturer:
KEC
File Size:
608.62 KB
Description:
N channel mos field effect transistor.
KHB9D0N90NA Datasheet (608.62 KB)
* VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) =54nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1)
KHB9D0N90NA Datasheet (608.62 KB)
KHB9D0N90NA
KEC
608.62 KB
N channel mos field effect transistor.
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