KHB9D0N90NA N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KHB9D0N90NA
Manufacturer: KEC
File Size: 608.62 KB
Datasheet: KHB9D0N90NA-KEC.pdf
Description: N CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ. ) @VGS =10V Qg(typ. ) =54nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1)

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KHB9D0N90NA CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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