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KHB9D0N90NA N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB9D0N90NA Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

KHB9D0N90NA Features

* VDSS(Min. )= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ. ) @VGS =10V Qg(typ. ) =54nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1)

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Datasheet Details

Part number
KHB9D0N90NA
Manufacturer
KEC
File Size
608.62 KB
Datasheet
KHB9D0N90NA-KEC.pdf
Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
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