KHB9D0N90NA Datasheet, transistor equivalent, KEC

KHB9D0N90NA Features

• Transistor VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) =54nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Dr

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Part number:

KHB9D0N90NA

Manufacturer:

KEC

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent a

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KHB9D0N90NA

KEC

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