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KHB9D5N20P1

(KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB9D5N20P1 Features

* VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO

KHB9D5N20P1 General Description

A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for e.

KHB9D5N20P1 Datasheet (526.19 KB)

Preview of KHB9D5N20P1 PDF

Datasheet Details

Part number:

KHB9D5N20P1

Manufacturer:

KEC

File Size:

526.19 KB

Description:

(khb9d5n20f1/f2/p1) n channel mos field effect transistor.

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KHB9D5N20P1 KHB9D5N20F1 CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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