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KHB9D5N20P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB9D5N20P Features

* VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO

KHB9D5N20P General Description

KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent .

KHB9D5N20P Datasheet (106.57 KB)

Preview of KHB9D5N20P PDF

Datasheet Details

Part number:

KHB9D5N20P

Manufacturer:

KEC

File Size:

106.57 KB

Description:

N channel mos field effect transistor.

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KHB9D5N20P CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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