K4N25 Datasheet, Emitting), KODENSHI KOREA CORP

K4N25 Features

• Emitting)
• Switching Time - Typ. 3
• Á
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)
• Electrical Isolatio

PDF File Details

Part number:

K4N25

Manufacturer:

KODENSHI KOREA CORP

File Size:

256.34kb

Download:

📄 Datasheet

Description:

Photocoupler(these photocouplers consist of a gallium arsenide infrared emitting).

K4N25 Application

• Applications
• Interface between two circuits of different potential
• Vending Machine, Voltage Regulator
• Traffic Controll

TAGS

K4N25

KODENSHI KOREA CORP

📁 Related Datasheet

K4N25A - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N25 • K4N25A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in .

K4N25G - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N25G • K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pa.

K4N25H - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N25G • K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pa.

K4N26 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N26 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin p.

K4N26323AE-GC - 128Mbit GDDR2 SDRAM (Samsung)
K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003.

K4N27 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N27 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin p.

K4N28 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N28 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin p.

K4N29 - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N29 • K4N29A DIMENSION 7.62 6 5 4 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Da.

K4N29A - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N29 • K4N29A DIMENSION 7.62 6 5 4 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Da.

K4N30 - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
Photocoupler K4N30 DIMENSION 7.62 6 5 4 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington .