K4N51163QC-ZC
Samsung
1.44 MB
512mbit gddr2 sdram.
K4N51163QC-ZC
512M gDDR2 SDRAM
512Mbit gDDR2 SDRAM
Revision 1.5 October 2005
Notice
INFORMATION I.
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM
The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4ban.
📁 Related Datasheet
K4N51163QC - 512Mbit gDDR2 SDRAM
(Samsung)
http://.BDTIC./SAMSUNG
K4N51163QC
512M gDDR2 SDRAM
512Mbit gDDR2 SDRAM
Revision 1.8 October 2006
Notice
INFORMATION IN THIS DOCUMENT IS PROV.
K4N51163QZ - 512Mbit gDDR2 SDRAM
(Samsung)
K4N51163QZ
512M gDDR2 SDRAM
512Mbit gDDR2 SDRAM
84FBGA with Halogen-Free & Lead-Free (RoHS pliant)
Revision 1.3 September 2008
INFORMATION IN TH.
K4N56163QF-GC - 256Mbit gDDR2 SDRAM
(Samsung)
K4N56163QF-GC
256M gDDR2 SDRAM
256Mbit gDDR2 SDRAM
Revision 2.0 October 2005
Notice
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.
K4N56163QG - 256Mbit gDDR2 SDRAM
(Samsung)
K4N56163QG
256M gDDR2 SDRAM
256Mbit gDDR2 SDRAM
Revision 1.4 December 2006
Notice
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P.
K4N25 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
(KODENSHI KOREA CORP)
Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in .
K4N25A - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
(KODENSHI KOREA CORP)
Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in .
