K4N51163QC-ZC Datasheet - Samsung

K4N51163QC-ZC 512Mbit gDDR2 SDRAM

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following k.

K4N51163QC-ZC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. F.

K4N51163QC-ZC Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 3,4,5

* Programmable Additive Latency : 0, 1, 2, 3 and 4

* Write Latency (WL) = Read Late

K4N51163QC-ZC-Samsung.pdf

K4N51163QC-ZC Datasheet Preview — Preview of K4N51163QC-ZC PDF

Datasheet Details

Part number:

K4N51163QC-ZC

Manufacturer:

Samsung

File Size:

1.44 MB

Description:

512mbit gddr2 sdram.

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K4N51163QC-ZC K4N51163QC-ZC 512Mbit gDDR2 SDRAM Samsung

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