Datasheet Details
- Part number
- K4N51163QC-ZC
- Manufacturer
- Samsung
- File Size
- 1.44 MB
- Datasheet
- K4N51163QC-ZC-Samsung.pdf
- Description
- 512Mbit gDDR2 SDRAM
K4N51163QC-ZC Description
K4N51163QC-ZC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM
The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.
K4N51163QC-ZC Features
* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Letency : 3,4,5
* Programmable Additive Latency : 0, 1, 2, 3 and 4
* Write Latency (WL) = Read Late
K4N51163QC-ZC Applications
* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. -
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