K4N51163QC-ZC - 512Mbit gDDR2 SDRAM
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.
This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications.
The chip is designed to comply with the following k
K4N51163QC-ZC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4N51163QC-ZC Features
* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Letency : 3,4,5
* Programmable Additive Latency : 0, 1, 2, 3 and 4
* Write Latency (WL) = Read Late
