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K4N56163QG

256Mbit gDDR2 SDRAM

K4N56163QG Features

* 1.8V + 0.1V power supply for device operation for -ZC25/2A

* 1.8V + 0.1V power supply for I/O interface for -ZC25/2A

* 2.0V + 0.1V power supply for device operation for -ZC20/22

* 2.0V + 0.1V power supply for I/O interface for -ZC20/22

* 4 Banks operation

K4N56163QG General Description

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip is designed to comply with the following .

K4N56163QG Datasheet (961.34 KB)

Preview of K4N56163QG PDF

Datasheet Details

Part number:

K4N56163QG

Manufacturer:

Samsung

File Size:

961.34 KB

Description:

256mbit gddr2 sdram.
K4N56163QG 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P.

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K4N56163QG 256Mbit gDDR2 SDRAM Samsung

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