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K4N56163QG - 256Mbit gDDR2 SDRAM

K4N56163QG Description

K4N56163QG 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P.
FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.

K4N56163QG Features

* 1.8V + 0.1V power supply for device operation for -ZC25/2A
* 1.8V + 0.1V power supply for I/O interface for -ZC25/2A
* 2.0V + 0.1V power supply for device operation for -ZC20/22
* 2.0V + 0.1V power supply for I/O interface for -ZC20/22
* 4 Banks operation

K4N56163QG Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K4N56163QG
Manufacturer
Samsung
File Size
961.34 KB
Datasheet
K4N56163QG-Samsung.pdf
Description
256Mbit gDDR2 SDRAM

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256Mbit gDDR2 SDRAM Samsung
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