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K4N26323AE-GC - 128Mbit GDDR2 SDRAM

K4N26323AE-GC Description

K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003.
- 1bank, 2bank system - Added System Selection mode in EMRS table.

K4N26323AE-GC Features

* 2.5V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* On-Die Termination for all inputs except CKE,ZQ
* Output Driver Strength adjustment by EMRS
* SSTL_18 compatible inputs/outputs
* 4 banks operation

K4N26323AE-GC Applications

* -4- Rev. 1.7 (Jan. 2003) K4N26323AE-GC PIN CONFIGURATION Normal Package (Top View) 128M GDDR2 SDRAM 2 3 4 B DQS0 /DQS0 VSSQ 5 DQ3 6 DQ2 7 DQ0 8 DQ31 9 DQ29 10 DQ28 11 12 13 VSSQ /DQS3 DQS3 C DQ4 DM0 VDDQ VDDQ DQ1 VDDQ VDDQ DQ30 VDDQ VDDQ DM3 DQ27 D DQ6 DQ5 VSSQ VSSQ VSSQ VDD VDD

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Datasheet Details

Part number
K4N26323AE-GC
Manufacturer
Samsung
File Size
821.36 KB
Datasheet
K4N26323AE-GC-Samsung.pdf
Description
128Mbit GDDR2 SDRAM

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