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K4N26323AE-GC

128Mbit GDDR2 SDRAM

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
part Samsung Semiconductor K4N26323AE-GC22 Bristol Electronics 1792 0
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K4N26323AE-GC Datasheet (821.36 KB)

Preview of K4N26323AE-GC PDF Datasheet

Datasheet Details

Part number:

K4N26323AE-GC

Manufacturer:

Samsung

File Size:

821.36 KB

Description:

128mbit gddr2 sdram

K4N26323AE-GC Features

* 2.5V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* On-Die Termination for all inputs except CKE,ZQ

* Output Driver Strength adjustment by EMRS

* SSTL_18 compatible inputs/outputs

* 4 banks operation

K4N26323AE-GC General Description

- 1bank, 2bank system - Added System Selection mode in EMRS table. Revision 0.0 (August 2001) -3- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 1M x 32Bit x 4 Banks GDDR2 Synchronous DRAM with Differential Data Strobe 128M GDDR2 SDRAM FEATURES

* 2.5V + 0.1V power supply for device operation
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K4N26323AE-GC 128Mbit GDDR2 SDRAM Samsung

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