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K4N51163QZ Datasheet - Samsung

512Mbit gDDR2 SDRAM

K4N51163QZ Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 5, 6, 7

* Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6

* Write Latency (WL) = Read

K4N51163QZ General Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the following key gDDR.

K4N51163QZ Datasheet (1.37 MB)

Preview of K4N51163QZ PDF

Datasheet Details

Part number:

K4N51163QZ

Manufacturer:

Samsung

File Size:

1.37 MB

Description:

512mbit gddr2 sdram.
K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN TH.

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TAGS

K4N51163QZ 512Mbit gDDR2 SDRAM Samsung

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