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K4N51163QZ

512Mbit gDDR2 SDRAM

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Distributor Samsung Semiconductor K4N51163QZ-HC25 Quest Components 1190 405 units
$4.5

K4N51163QZ Datasheet (1.37 MB)

Preview of K4N51163QZ PDF

Datasheet Details

Part number:

K4N51163QZ

Manufacturer:

Samsung

File Size:

1.37 MB

Description:

512mbit gddr2 sdram.
K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN TH.

K4N51163QZ Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 5, 6, 7

* Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6

* Write Latency (WL) = Read

K4N51163QZ General Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the following key gDDR.

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K4N51163QZ 512Mbit gDDR2 SDRAM Samsung

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