K4N56163QF-GC - 256Mbit gDDR2 SDRAM
FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.
This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications.
The chip is designed to comply with the following
K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4N56163QF-GC Features
* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Letency : 4,5,6 and 7
* Programmable Additive Latency : 0, 1, 2, 3. 4 and 5
* Write Latency (WL) =
