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K4N56163QF-GC Datasheet - Samsung

256Mbit gDDR2 SDRAM

K4N56163QF-GC Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 4,5,6 and 7

* Programmable Additive Latency : 0, 1, 2, 3. 4 and 5

* Write Latency (WL) =

K4N56163QF-GC General Description

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip is designed to comply with the following .

K4N56163QF-GC Datasheet (1.37 MB)

Preview of K4N56163QF-GC PDF

Datasheet Details

Part number:

K4N56163QF-GC

Manufacturer:

Samsung

File Size:

1.37 MB

Description:

256mbit gddr2 sdram.
K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

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TAGS

K4N56163QF-GC 256Mbit gDDR2 SDRAM Samsung

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