K4N56163QF-GC Datasheet - Samsung

K4N56163QF-GC 256Mbit gDDR2 SDRAM

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip is designed to comply with the following .

K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. F.

K4N56163QF-GC Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 4,5,6 and 7

* Programmable Additive Latency : 0, 1, 2, 3. 4 and 5

* Write Latency (WL) =

K4N56163QF-GC-Samsung.pdf

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Datasheet Details

Part number:

K4N56163QF-GC

Manufacturer:

Samsung

File Size:

1.37 MB

Description:

256mbit gddr2 sdram.

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K4N56163QF-GC K4N56163QF-GC 256Mbit gDDR2 SDRAM Samsung

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