K4N51163QC Datasheet - Samsung

512Mbit gDDR2 SDRAM

K4N51163QC Features

* 1.8V + 0.1V power supply for device operation

* 1.8V + 0.1V power supply for I/O interface

* 4 Banks operation

* Posted CAS

* Programmable CAS Letency : 3,4,5

* Programmable Additive Latency : 0, 1, 2, 3 and 4

* Write Latency (WL) = Read Late

K4N51163QC General Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following k.

K4N51163QC Datasheet (1.00 MB)

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Datasheet Details

Part number:

K4N51163QC

Manufacturer:

Samsung

File Size:

1.00 MB

Description:

512mbit gddr2 sdram.
http://www.BDTIC.com/SAMSUNG K4N51163QC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.8 October 2006 Notice INFORMATION IN THIS DOCUMENT IS PROV.

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K4N51163QC 512Mbit gDDR2 SDRAM Samsung

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K4N51163QC Features

K4N51163QC General Description

Datasheet Details

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