ME2304 Datasheet (Matsuki) - N-Channel Enhancement MOSFET

ME2304, N-Channel Enhancement MOSFET

The ME2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2304 Features

* RDS(ON) ≦117mΩ@VGS=10V

* RDS(ON) ≦190mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Loa