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ME2304-G

N-Channel Enhancement MOSFET

ME2304-G Features

* RDS(ON) ≦117mΩ@VGS=10V

* RDS(ON) ≦190mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Loa

ME2304-G General Description

The ME2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2304-G Datasheet (1.35 MB)

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Preview of ME2304-G PDF

Datasheet Details

Part number:

ME2304-G

Manufacturer:

Matsuki

File Size:

1.35 MB

Description:

N-channel enhancement mosfet.

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ME2304-G N-Channel Enhancement MOSFET Matsuki

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