Description
N-Channel Enhancement MOSFET GENERAL .
The ME2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
Features
* RDS(ON) ≦117mΩ@VGS=10V
* RDS(ON) ≦190mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
PIN CONFIGURATION
(SOT-23) Top View
e Ordering Information: ME2304 (Pb-free)
ME2304-G (Green product-Halogen f