MEBSS84 - P-Channel MOSFET

Matsuki

Datasheet Details

The MEBSS84 is the P-Channel logic enhancement mode power.
RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS.
RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to.
Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
Exceptional on-resistance and maximum DC current for low voltage.

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Published: Mar 20, 2018 |