Datasheet4U Logo Datasheet4U.com

APTM100H80FT1G MOSFET Power Module

APTM100H80FT1G Description

APTM100H80FT1G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C 34 Q1 Q3 52 61 Q2 Q4 79 8 10 11 .

APTM100H80FT1G Features

* Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Very low stray inductance - Symmetrical design
* Internal thermistor for temperature monitoring
* High

📥 Download Datasheet

Preview of APTM100H80FT1G PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • APTM100H18F - MOSFET Power Module (Advanced Power Technology)
  • APTM100H35FT - MOSFET Power Module (Advanced Power Technology)
  • APTM100H35FT3 - MOSFET Power Module (Advanced Power Technology)
  • APTM100H45FT3 - MOSFET Power Module (Advanced Power Technology)
  • APTM100H45SCT - MOSFET Power Module (Advanced Power Technology)
  • APTM100H45ST - MOSFET Power Module (Advanced Power Technology)
  • APTM100A13D - MOSFET Power Module (Advanced Power Technology)
  • APTM100A18FTG - MOSFET Power Module (Advanced Power Technology)

📌 All Tags

MOSFET Power Module Microsemi
Microsemi APTM100H80FT1G-like datasheet