APTM100H80FT1G MOSFET Power Module

Microsemi

Description

APTM100H80FT1G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C 34 Q1 Q3 52 61 Q2 Q4 79 8 10 11 .

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Datasheet Specifications

Part number: APTM100H80FT1G
Manufacturer: Microsemi ↗
File Size: 137.07 KB
Datasheet: APTM100H80FT1G-Microsemi.pdf
Description: MOSFET Power Module

Features

* Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged
* Very low stray inductance - Symmetrical design
* Internal thermistor for temperature monitoring
* High

APTM100H80FT1G Distributors

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APTM100H80FT1G MOSFET Power Module Microsemi

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