MGF2407A High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF2407A S to Ku BAND / 0.28W non - matched .
The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. High output power Po=24.

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Datasheet Specifications

Part number: MGF2407A
Manufacturer: Mitsubishi
File Size: 119.52 KB
Datasheet: MGF2407A_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* High output power Po=24.5dBm(TYP. ) @f=14.5GHz
* High linear power gain GLP=8.0dB(TYP. ) @f=14.5GHz

MGF2407A Distributors

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MGF2407A High-power GaAs FET Mitsubishi

Mitsubishi MGF2407A-like datasheet