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MGF2407A Datasheet - Mitsubishi

High-power GaAs FET

* High output power Po=24.5dBm(TYP.) @f=14.5GHz

* High linear power gain GLP=8.0dB(TYP.) @f=14.5GHz

* High power added efficiency P.A.E.=30%(TYP.) @f=14.5GHz,P1dB APPLICATION

* S to Ku Band power amplifiers QUALITY

* IG RECOMMENDED BIAS CONDITIONS

* Vds=10V

* Ids=75mA Re

MGF2407A

Mitsubishi

119.52 KB

High-power gaas fet.

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Stock and price

Macronix International Co Ltd

MX29LV040CTI-70G

1929 In Stock

Qty : 1092 units

Unit Price : $2.2

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MGF2407A High-power GaAs FET Mitsubishi

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