MGF2430A High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF2430A L to Ku BAND / 1.1W non - matched .
The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers. High output power P1dB=30.

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Datasheet Specifications

Part number: MGF2430A
Manufacturer: Mitsubishi
File Size: 628.17 KB
Datasheet: MGF2430A_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* High output power P1dB=30.5dBm(T. Y. P) @f=14.5GHz
* High linear gain GLP=6.5dB(TYP. ) @f=14.5GHz
* High power added efficiency P. A. E=27%(TYP. ) @f=14.5GHz,P1dB

MGF2430A Distributors

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MGF2430A High-power GaAs FET Mitsubishi

Mitsubishi MGF2430A-like datasheet