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MGF2430A Datasheet - Mitsubishi

High-power GaAs FET

* High output power P1dB=30.5dBm(T.Y.P) @f=14.5GHz

* High linear gain GLP=6.5dB(TYP.) @f=14.5GHz

* High power added efficiency P.A.E=27%(TYP.) @f=14.5GHz,P1dB

* Hermetically sealed metal package APPLICATION

* For L to Ku band power amplifiers QUALITY

MGF2430A

Mitsubishi

628.17 KB

High-power gaas fet.

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Motorola Semiconductor Products

MCR1906-4

79 In Stock

Unit Price : $0

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MGF2430A High-power GaAs FET Mitsubishi

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