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MRF21010LSR1 Datasheet - Motorola

MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 10 pF Chip Capacitor, B Case Type N Connector Flange Mounts 1.0 kW Chip Resis.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical W - CDMA Performance.

MRF21010LSR1 Features

* .89 - j5.04 2.73 - j6.19 Zload Ω 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure

MRF21010LSR1 Datasheet (542.13 KB)

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Datasheet Details

Part number:

MRF21010LSR1

Manufacturer:

Motorola

File Size:

542.13 KB

Description:

Rf power field effect transistors n-channel enhancement-mode lateral mosfets.

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MRF21010LSR1 Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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