* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Oper
MRF7S35120HSR3 Datasheet (479.34 KB)
MRF7S35120HSR3
Motorola
479.34 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channe.
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