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MRF7S35120HSR3 RF Power Field Effect Transistor

MRF7S35120HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev.1, 6/2008 RF Power Field Effect Transistor N - Channe.
47 Ω, 100 MHz Short Ferrite Bead 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 3.

MRF7S35120HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Oper

MRF7S35120HSR3 Applications

* operating at frequencies between 3100 and 3500 MHz.
* Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg. ), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain
* 12 dB Drain Efficiency
* 40%
* Typ

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Datasheet Details

Part number
MRF7S35120HSR3
Manufacturer
Motorola
File Size
479.34 KB
Datasheet
MRF7S35120HSR3_Motorola.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Motorola
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