MRF8S26060HR3 - RF Power Field Effect Transistors

Motorola Semiconductor

MRF8S26060HR3 Datasheet Preview — Preview of MRF8S26060HR3 PDF

Datasheet Details

Part number	MRF8S26060HR3
Manufacturer	Motorola Semiconductor
File Size	252.83 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S26060HR3_MotorolaSemiconductor.pdf

MRF8S26060HR3 Product details

Description

Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer MRF8S26060HR3 MRF8S26060HSR3 4 RF Device Data Freescale Semiconductor

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Jul 1, 2010 |