NCEP18N10AQ N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

NCEP18N10AQ Description

http://www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET .
The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

NCEP18N10AQ Features

* VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top Vi

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NCEP18N10AQ Datasheet Preview — Preview of NCEP18N10AQ PDF

Datasheet Details

Part number: NCEP18N10AQ
Manufacturer: NCE Power Semiconductor
File Size: 322.09 KB
Datasheet: NCEP18N10AQ-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

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N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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