Datasheet4U Logo Datasheet4U.com

KSD5079 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of KSD5079 PDF
datasheet Preview Page 2

KSD5079 Product details

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25-C Tj Junction Tem

📁 KSD5079 Similar Datasheet

  • KSD5070 - NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR (Fairchild Semiconductor)
  • KSD5071 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5072 - NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR (Fairchild)
  • KSD5074 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5075 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5075T - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5076 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5078 - Silicon NPN Power Transistor (Inchange Semiconductor)
Other Datasheets by NJS
Published: |