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BLF4G10LS-120

UHF power LDMOS transistor

BLF4G10LS-120 Features

* s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s

BLF4G10LS-120 General Description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (A.

BLF4G10LS-120 Datasheet (140.80 KB)

Preview of BLF4G10LS-120 PDF

Datasheet Details

Part number:

BLF4G10LS-120

Manufacturer:

NXP ↗

File Size:

140.80 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev. 01

* 10 January 2006 Product data sheet 1. Product profile 1.1 General desc.

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BLF4G10LS-120 UHF power LDMOS transistor NXP

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