BLF4G10LS-120 Datasheet - NXP

BLF4G10LS-120 UHF power LDMOS transistor

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (A.

BLF4G10LS-120 Features

* s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s

BLF4G10LS-120 Datasheet (140.80 KB)