BLF4G10LS-120 UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev.01 * 10 January 2006 Product data sheet 1.Product proﬁle 1.1 General desc.
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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Datasheet Specifications

Part number: BLF4G10LS-120
Manufacturer: NXP ↗
File Size: 140.80 KB
Datasheet: BLF4G10LS-120_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor

Features

* s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (AV) Gp ηD (dB) (%) 19 19 57 40 46 ACPR400 (dBc)
* 6

BLF4G10LS-120 Distributors

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BLF4G10LS-120 UHF power LDMOS transistor NXP

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