Datasheet Details
Part number:
BLF4G10LS-120
Manufacturer:
File Size:
140.80 KB
Description:
Uhf power ldmos transistor.
BLF4G10LS-120_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLF4G10LS-120
Manufacturer:
File Size:
140.80 KB
Description:
Uhf power ldmos transistor.
BLF4G10LS-120, UHF power LDMOS transistor
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.
Mode of operation CW GSM EDGE 2-tone [1] [2] VDS (V) 28 28 28 PL (W) 120 48 (A
BLF4G10LS-120 Features
* s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s
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