BLF4G10LS-120 - UHF power LDMOS transistor

Name: BLF4G10LS-120
SKU: BLF4G10LS-120-571117

NXP

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Datasheet Details

Part number	BLF4G10LS-120
Manufacturer	NXP
File Size	140.80 KB
Description	UHF power LDMOS transistor
Datasheet	BLF4G10LS-120_PhilipsSemiconductors.pdf

BLF4G10LS-120 Product details

Description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 61 [1] - ACPR600 (dBc) 72 [2] - EVM (%) 1.5 - IMD3 (dBc) 31 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600

Features

s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =.
61 dBc (typ) x ACPR600 =.
72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semicon.

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Published: Feb 7, 2007 |