BLF4G10-120 - UHF power LDMOS transistor

Name: BLF4G10-120
SKU: BLF4G10-120-571118

NXP

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Datasheet Details

Part number	BLF4G10-120
Manufacturer	NXP
File Size	155.94 KB
Description	UHF power LDMOS transistor
Datasheet	BLF4G10-120_PhilipsSemiconductors.pdf

BLF4G10-120 Product details

Description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 61 [1] 72 [2] 1.5 31 861 to 961 28 861 to 961 28 GSM EDGE 861 to 961 28 120 (PEP) 19 ACPR4

Features

s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =.
61 dBc (typ) x ACPR600 =.
72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BLF4.

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Published: Feb 7, 2007 |