BLF4G10-120 Datasheet, Transistor, NXP

BLF4G10-120 Features

• Transistor s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =

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BLF4G10-120

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📄 Datasheet

Description:

Uhf power ldmos transistor. 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF p

BLF4G10-120 Application

• Applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circu

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BLF4G10-120

NXP

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