BLF4G10-120_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLF4G10S-120, BLF4G10-120
Manufacturer:
File Size:
155.94 KB
Description:
Uhf power ldmos transistor.
Note:
This datasheet PDF includes multiple part numbers: BLF4G10S-120, BLF4G10-120.
Please refer to the document for exact specifications by model.
BLF4G10S-120, BLF4G10-120, UHF power LDMOS transistor
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%)
BLF4G10S-120 Features
* s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ru
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