BLF4G10S-120, BLF4G10-120 UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev.01 * 10 January 2006 Product data sheet 1.Product proﬁle 1.1 .
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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BLF4G10S-120 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF4G10S-120, BLF4G10-120. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF4G10S-120, BLF4G10-120
Manufacturer: NXP ↗
File Size: 155.94 KB
Datasheet: BLF4G10-120_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF4G10S-120, BLF4G10-120.
Please refer to the document for exact specifications by model.

Features

* s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ru

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%

BLF4G10S-120 Distributors

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BLF4G10-120 UHF power LDMOS transistor NXP

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