BLF4G20LS-110B Datasheet - NXP

BLF4G20LS-110B UHF power LDMOS transistor

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise speciﬁed; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1] .

BLF4G20LS-110B Features

* s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efﬁciency = 38.5 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power co

BLF4G20LS-110B Datasheet (135.74 KB)