BLF4G20LS-110B - UHF power LDMOS transistor

Name: BLF4G20LS-110B
SKU: BLF4G20LS-110B-568581

NXP

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Datasheet Details

Part number	BLF4G20LS-110B
Manufacturer	NXP
File Size	135.74 KB
Description	UHF power LDMOS transistor
Datasheet	BLF4G20LS-110B_PhilipsSemiconductors.pdf

BLF4G20LS-110B Product details

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 61 [1] ACPR600 (dBc) 74 [2] EVMrms (%) 2.1 ACPR400 at 30 kHz resolution bandwidth.ACPR600

Features

s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efﬁciency = 38.5 % (typ) x ACPR400 =.
61 dBc (typ) x ACPR600 =.
74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power control s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use Philips Semiconductors BLF4.

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Published: Jan 19, 2007 |