BLF4G20LS-110B Datasheet, Transistor, NXP

BLF4G20LS-110B Features

• Transistor s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efficiency = 38.5

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BLF4G20LS-110B

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📄 Datasheet

Description:

Uhf power ldmos transistor. 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f =

BLF4G20LS-110B Application

• Applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless ot

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BLF4G20LS-110B

NXP

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