BLF4G20LS-110B UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF4G20LS-110B UHF power LDMOS transistor Rev.01 * 10 January 2006 Product data sheet 1.Product proﬁle 1.1 General des.
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

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Datasheet Specifications

Part number: BLF4G20LS-110B
Manufacturer: NXP ↗
File Size: 135.74 KB
Datasheet: BLF4G20LS-110B_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor

Features

* s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efﬁciency = 38.5 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power co

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise speciﬁed; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1] [2] VDS (V) 28 28 PL (W) 100 48 (AV) Gp (dB) 13.4 13.8

BLF4G20LS-110B Distributors

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BLF4G20LS-110B UHF power LDMOS transistor NXP

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