Datasheet Details
Part number:
BLF4G20LS-110B
Manufacturer:
File Size:
135.74 KB
Description:
Uhf power ldmos transistor.
BLF4G20LS-110B_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLF4G20LS-110B
Manufacturer:
File Size:
135.74 KB
Description:
Uhf power ldmos transistor.
BLF4G20LS-110B, UHF power LDMOS transistor
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1]
BLF4G20LS-110B Features
* s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV) x Gain = 13.8 dB (typ) x Efficiency = 38.5 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 74 dBc (typ) x EVMrms = 2.1 % (typ) s Easy power co
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