BLF640 Broadband power LDMOS transistor

NXP

Description

BLF640 Broadband power LDMOS transistor Rev.2 * 11 April 2013 Product data sheet 1.Product profile 1.1 General .
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1.

📥 Download Datasheet

BLF640 Datasheet Preview — Preview of BLF640 PDF

Datasheet Specifications

Part number: BLF640
Manufacturer: NXP ↗
File Size: 130.94 KB
Datasheet: BLF640-NXP.pdf
Description: Broadband power LDMOS transistor

Features

* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* No internal matching for broadband operation
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applicatio

Applications

* at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 1-carrier W-CDMA 2110 to 2170 28 2 19.3

BLF640 Distributors

📁 Related Datasheet

BLF642 BLF644P BLF645 BLF647P BLF647PS BLF6G10-200RN

📌 All Tags

BLF640 Broadband power LDMOS transistor NXP

NXP BLF640-like datasheet