BLF642

The BLF642 is Broadband power LDMOS transistor designed by NXP.

Product Overview

NXP

Part number	BLF642
Manufacturer	NXP
File Size	211.50 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF642-NXP.pdf
Additional preview pages of the BLF642 datasheet.

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
Average output power = 35 W.
Power gain = 19 dB.
Drain efficiency = 63 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :.
Average output power = 17.5 W.
Power gain = 19 dB.
Drain efficiency = 48 %.
Intermodulation distortion = 28 dBc.
Integrated ESD protection.
Excellent.

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Published: Jan 27, 2016 |