BLF642

Broadband power LDMOS transistor

NXP

BLF642 Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :

* Average output power = 35 W

* Power gain = 19 dB

* Drain efficiency = 63 %

* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain cur

BLF642 General Description

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF perfo.

BLF642 Datasheet (211.50 KB)

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