BLF642 Broadband power LDMOS transistor

NXP

Description

BLF642 Broadband power LDMOS transistor Rev.2 * 22 July 2011 Product data sheet 1.Product profile 1.1 General .
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

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Datasheet Specifications

Part number: BLF642
Manufacturer: NXP ↗
File Size: 211.50 KB
Datasheet: BLF642-NXP.pdf
Description: Broadband power LDMOS transistor

Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :
* Average output power = 35 W
* Power gain = 19 dB
* Drain efficiency = 63 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain cur

Applications

* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL (

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BLF642 Broadband power LDMOS transistor NXP

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