BLF647P

Broadband power LDMOS transistor

NXP

BLF647P Features

* Integrated ESD protection

* Excellent ruggedness

* High power gain

* High efficiency

* Excellent reliability

* Easy power control

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* Communication transmitter

BLF647P General Description

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF .

BLF647P Datasheet (145.12 KB)