BLF647P Broadband power LDMOS transistor

NXP

Description

BLF647P Broadband power LDMOS transistor Rev.2 * 12 April 2013 Product data sheet 1.Product profile 1.1 General .
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

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Datasheet Specifications

Part number: BLF647P
Manufacturer: NXP ↗
File Size: 145.12 KB
Datasheet: BLF647P-NXP.pdf
Description: Broadband power LDMOS transistor

Features

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control

Applications

* The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(A

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BLF647P Broadband power LDMOS transistor NXP

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