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BLF647P Broadband power LDMOS transistor

BLF647P Description

BLF647P Broadband power LDMOS transistor Rev.2 * 12 April 2013 Product data sheet 1.Product profile 1.1 General .
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

BLF647P Features

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control

BLF647P Applications

* The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(A

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Datasheet Details

Part number
BLF647P
Manufacturer
NXP ↗
File Size
145.12 KB
Datasheet
BLF647P-NXP.pdf
Description
Broadband power LDMOS transistor

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Broadband power LDMOS transistor NXP
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