CGY2010G Datasheet - NXP

CGY2010G GSM 4W power amplifiers

PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to oper.

CGY2010G Features

* Power Amplifier (PA) overall efficiency 45%

* 35.5 dB gain

* 0 dBm input power

* Gain control range >55 dB

* Integrated power sensor driver

* Low output noise floor of PA <

* 129 dBm/Hz in GSM RX band

* Wide operating temperature range

CGY2010G_PhilipsSemiconductors.pdf