CGY2010G - GSM 4W power amplifiers
PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to oper
CGY2010G Features
* Power Amplifier (PA) overall efficiency 45%
* 35.5 dB gain
* 0 dBm input power
* Gain control range >55 dB
* Integrated power sensor driver
* Low output noise floor of PA <
* 129 dBm/Hz in GSM RX band
* Wide operating temperature range
