CGY2013G GSM 4W power amplifier

NXP

Description

INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary speciﬁcation Supersedes data of 1996 Jul 12 File under Integrated Circui.
plastic low proﬁle quad ﬂat package; 48 leads; body 7 × 7 × 1.

📥 Download Datasheet

CGY2013G Datasheet Preview — Preview of CGY2013G PDF

Datasheet Specifications

Part number: CGY2013G
Manufacturer: NXP ↗
File Size: 86.19 KB
Datasheet: CGY2013G_PhilipsSemiconductors.pdf
Description: GSM 4W power amplifier

Features

* Power Amplifier (PA) overall efficiency 52%
* 35.5 dB gain
* 0 dBm input power
* Gain control range >55 dB
* Low output noise floor of PA <
* 130 dBm/Hz in GSM RX band
* Wide operating temperature range
* 20 to +85 °C
* LQFP 48

Applications

* 880 to 915 MHz hand-held transceivers for E-GSM applications
* 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER

CGY2013G Distributors

📁 Related Datasheet

CGY21 CGY2128UH-C2 CGY2394SUH-C1 CGY0819 CGY0918 CGY1032

📌 All Tags

CGY2013G GSM power amplifier NXP

NXP CGY2013G-like datasheet