Datasheet4U.com

CGY2013G - GSM 4W power amplifier

NXP

📥 Download Datasheet

CGY2013G Datasheet Preview — Preview of CGY2013G PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: CGY2013G
Manufacturer: NXP ↗
File Size: 86.19 KB
Datasheet: CGY2013G_PhilipsSemiconductors.pdf
Description: GSM 4W power amplifier

CGY2013G Product details

Description

plastic low proﬁle quad ﬂat package; 48 leads; body 7 × 7 × 1.4 mm PARAME

Features

Power Amplifier (PA) overall efficiency 52%.
35.5 dB gain.
0 dBm input power.
Gain control range >55 dB.
Low output noise floor of PA <.
130 dBm/Hz in GSM RX band.
Wide operating temperature range.
20 to +85 °C.
LQFP 48 pin package.
Compatible with power ramping controller PCF5077.
Compatible with GSM RF transceiver SA1620.

📁 Related Datasheet

CGY21 - GaAs MMIC (Siemens Semiconductor Group)
CGY2128UH-C2 - Low Noise Amplifier (MACOM)
CGY2394SUH-C1 - True Time Delay (MACOM)
CGY0819 - GaAs MMIC (Siemens Semiconductor Group)
CGY0918 - GaAs MMIC (Siemens Semiconductor Group)
CGY1032 - 1 GHz - 32 dB gain GaAs push-pull amplifier (NXP Semiconductors)
CGY1041 - 1 GHz - 21 dB gain GaAs push-pull amplifier (NXP Semiconductors)
CGY1043 - 1 GHz - 23 dB gain GaAs push-pull amplifier (NXP Semiconductors)

📌 All Tags

GSM power amplifier NXP

NXP CGY2013G-like datasheet

CGY2010G - GSM 4W power amplifiers
CGY2011G - GSM 4W power amplifiers
CGY2014 - GSM/DCS/PCS power amplifier
CGY2014ATW - GSM/DCS/PCS power amplifier
CGY2021G - DCS/PCS 2 W power amplifier
CGY2030M - DECT 500 mW power amplifier

CGY2013G Stock/Price