CGY2013G Datasheet - NXP

CGY2013G, GSM 4W power amplifier

INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary speciﬁcation Supersedes data of 1996 Jul 12 File under Integrated Circui.
plastic low proﬁle quad ﬂat package; 48 leads; body 7 × 7 × 1.

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Datasheet Details

Part number:

CGY2013G

Manufacturer:

NXP ↗

File Size:

86.19 KB

Description:

GSM 4W power amplifier

Features

* Power Amplifier (PA) overall efficiency 52%
* 35.5 dB gain
* 0 dBm input power
* Gain control range >55 dB
* Low output noise floor of PA <
* 130 dBm/Hz in GSM RX band
* Wide operating temperature range
* 20 to +85 °C
* LQFP 48

Applications

* 880 to 915 MHz hand-held transceivers for E-GSM applications
* 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER

CGY2013G Distributors

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CGY2013G GSM power amplifier NXP

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