CGY2011G GSM 4W power amplifiers

NXP

Description

INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective speciﬁcation Supersedes data of 1995 Oct 25 File under Integrat.
PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESC.

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Datasheet Specifications

Part number: CGY2011G
Manufacturer: NXP ↗
File Size: 79.53 KB
Datasheet: CGY2011G_PhilipsSemiconductors.pdf
Description: GSM 4W power amplifiers

Features

* Power Amplifier (PA) overall efficiency 45%
* 35.5 dB gain
* 0 dBm input power
* Gain control range >55 dB
* Integrated power sensor driver
* Low output noise floor of PA <
* 129 dBm/Hz in GSM RX band
* Wide operating temperature range

Applications

* 880 to 915 MHz hand-held transceivers for E-GSM applications
* 900 MHz TDMA systems. QUICK REFERENCE DATA SYMBOL VDD IDD Pout(max) Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2010G CGY2011G PACKAGE NAM

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CGY2011G GSM power amplifiers NXP

NXP CGY2011G-like datasheet