CGY2011G

GSM 4W power amplifiers

NXP

CGY2011G Features

* Power Amplifier (PA) overall efficiency 45%

* 35.5 dB gain

* 0 dBm input power

* Gain control range >55 dB

* Integrated power sensor driver

* Low output noise floor of PA <

* 129 dBm/Hz in GSM RX band

* Wide operating temperature range

CGY2011G General Description

PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to oper.

CGY2011G Datasheet (79.53 KB)

CGY2011G Datasheet Preview — Preview of CGY2011G PDF

Datasheet Details

Part number:

CGY2011G

Manufacturer:

NXP ↗

File Size:

79.53 KB

Description:

Gsm 4w power amplifiers.
INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective speciﬁcation Supersedes data of 1995 Oct 25 File under Integrat.

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CGY2011G GSM power amplifiers NXP

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CGY2011G Features

CGY2011G General Description

Datasheet Details

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