Datasheet Details
Part number:
MRFX1K80GN, MRFX1K80N
Manufacturer:
File Size:
1.61 MB
Description:
Rf power ldmos transistors.
Note:
This datasheet PDF includes multiple part numbers: MRFX1K80GN, MRFX1K80N.
Please refer to the document for exact specifications by model.
MRFX1K80GN, MRFX1K80N, RF Power LDMOS Transistors
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications.
Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.
Typical Performance Frequency (MHz) Signal Type 87.5 108 (1,2) 230 (3) CW Pulse (100 sec, 20% Duty Cycle) VDD (V) Pout (W) G
MRFX1K80GN Features
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* Lower thermal resist
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