Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These high r.
Features
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* Lower thermal resist
Applications
* Their
unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance
Frequency (MHz)
Signal Type
87.5
* 108 (1,2) 230 (3)
CW
Pulse (100 sec, 20% Duty Cycle)
VDD (V)
Pout (W)
Gps (dB)
60 1670 CW 23.8
65 1800 Peak 24.4
D (%) 83.5 75.7
Load Mismat
