Datasheet4U Logo Datasheet4U.com

MRFX1K80H RF Power LDMOS Transistor

MRFX1K80H Description

NXP Semiconductors Technical Data Document Number: MRFX1K80H Rev.1, 09/2018 RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement.

MRFX1K80H Features

* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* High breakdown volta

MRFX1K80H Applications

* Its unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance Frequency (MHz) Signal Type VDD (V) Pout (W) Gps (dB) D (%) 27 (1) CW 65 1800 CW 27.8 75.6 64 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 81.36 87.5
* 108 (2,3) CW CW

📥 Download Datasheet

Preview of MRFX1K80H PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRFX1K80H
Manufacturer
NXP ↗
File Size
1.14 MB
Datasheet
MRFX1K80H-NXP.pdf
Description
RF Power LDMOS Transistor

📁 Related Datasheet

  • MRF - Fast Acting Radial Lead Micro Fuse Series (Bel Fuse)
  • MRF-261 - High Band VHF FM Power Transistor (Eleflow)
  • MRF10005 - The RF Line Microwave Power Transistor (Tyco)
  • MRF1000MB - Microwave Pulse Power Transistors (Tyco)
  • MRF1001A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
  • MRF1002 - MICROWAVE POWER TRANSISTOR (Motorola)
  • MRF10031 - MICROWAVE POWER TRANSISTOR (Motorola)
  • MRF1004MA - NPN SILICON RF POWER TRANSISTOR (ASI)

📌 All Tags

Power LDMOS Transistor NXP
NXP MRFX1K80H-like datasheet