MRFX1K80H RF Power LDMOS Transistor

NXP

Description

NXP Semiconductors Technical Data Document Number: MRFX1K80H Rev.1, 09/2018 RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement.

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Datasheet Specifications

Part number: MRFX1K80H
Manufacturer: NXP ↗
File Size: 1.14 MB
Datasheet: MRFX1K80H-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* High breakdown volta

Applications

* Its unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance Frequency (MHz) Signal Type VDD (V) Pout (W) Gps (dB) D (%) 27 (1) CW 65 1800 CW 27.8 75.6 64 Pulse (100 sec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 81.36 87.5
* 108 (2,3) CW CW

MRFX1K80H Distributors

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MRFX1K80H Power LDMOS Transistor NXP

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