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MRFX1K80N RF Power LDMOS Transistors

MRFX1K80N Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These high r.

MRFX1K80N Features

* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* Lower thermal resist

MRFX1K80N Applications

* Their unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance Frequency (MHz) Signal Type 87.5
* 108 (1,2) 230 (3) CW Pulse (100 sec, 20% Duty Cycle) VDD (V) Pout (W) Gps (dB) 60 1670 CW 23.8 65 1800 Peak 24.4 D (%) 83.5 75.7 Load Mismat

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Datasheet Details

Part number
MRFX1K80N
Manufacturer
NXP ↗
File Size
1.61 MB
Datasheet
MRFX1K80N-NXP.pdf
Description
RF Power LDMOS Transistors

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Power LDMOS Transistors NXP
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