MRFX1K80N Datasheet (NXP) - RF Power LDMOS Transistors

MRFX1K80N, RF Power LDMOS Transistors

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications.

Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.

Typical Performance Frequency (MHz) Signal Type 87.5 108 (1,2) 230 (3) CW Pulse (100 sec, 20% Duty Cycle) VDD (V) Pout (W) G

MRFX1K80N Features

* Unmatched input and output allowing wide frequency range utilization

* Device can be used single

* ended or in a push

* pull configuration

* Qualified up to a maximum of 65 VDD operation

* Characterized from 30 to 65 V for extended power range

* Lower thermal resist