NX3020NAKV dual N-channel Trench MOSFET

NXP

Description

NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using.

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Datasheet Specifications

Part number: NX3020NAKV
Manufacturer: NXP ↗
File Size: 214.54 KB
Datasheet: NX3020NAKV-NXP.pdf
Description: dual N-channel Trench MOSFET

Applications

* Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 2

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NX3020NAKV dual N-channel Trench MOSFET NXP

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