PBSS2540M

0.5 A NPN low VCEsat (BISS) transistor

NXP

PBSS2540M Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Power management:

* DC-DC converter

PBSS2540M General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. MARKING TYPE NUMBER PBSS2540M MARK.

PBSS2540M Datasheet (219.25 KB)

PBSS2540M Datasheet Preview — Preview of PBSS2540M PDF

Datasheet Details

Part number:

PBSS2540M

Manufacturer:

NXP ↗

File Size:

219.25 KB

Description:

0.5 a npn low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product speciﬁca.

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TAGS

PBSS2540M 0.5 NPN low VCEsat BISS transistor NXP

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PBSS2540M Features

PBSS2540M General Description

Datasheet Details

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