PBSS2540M 0.5 A NPN low VCEsat (BISS) transistor

NXP

Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product speciﬁca.
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

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Datasheet Specifications

Part number: PBSS2540M
Manufacturer: NXP ↗
File Size: 219.25 KB
Datasheet: PBSS2540M_PhilipsSemiconductors.pdf
Description: 0.5 A NPN low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to reduced heat generation

Applications

* Power management:
* DC-DC converter
* Supply line switching
* Battery charger
* LCD backlighting.
* Peripheral driver:
* Driver in low supply voltage applications (e. g. lamps and LEDs).
* Inductive load drivers (e. g. relays, buzzers a

PBSS2540M Distributors

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PBSS2540M 0.5 NPN low VCEsat BISS transistor NXP

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