PTB23003X - NPN microwave power transistors

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NXP

PTB23003X NPN microwave power transistors by NXP - Datasheet Preview — Datasheet preview – PTB23003X

Datasheet Details

Part number	PTB23003X
Manufacturer	NXP
File Size	58.98 KB
Description	NPN microwave power transistors
Datasheet	PTB23003X Datasheet
Additional preview pages of the PTB23003X datasheet.

Product details

Description

olumns 1 c b e MAM131 DESCRIPTION Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.Marking code: 2303X.Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class B circuit.MODE OF OPERATION CW f (GHz) 2 VCC (V) 24 PL (W) ≥3 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.The produ

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

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Published: Apr 16, 2005 |