Datasheet Details
- Part number
- FDG8842CZ
- Manufacturer
- ON Semiconductor ↗
- File Size
- 509.46 KB
- Datasheet
- FDG8842CZ-ONSemiconductor.pdf
- Description
- MOSFET
FDG8842CZ Description
FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET Q1:30V,0.75A,0.4Ω; Q2: *25V, *0.41A,1.1Ω Fea.
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS t.
FDG8842CZ Features
* Q1: N-Channel
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
* Max rDS(on) = 1.1Ω at VGS =
* 4.5V, ID =
* 0.41A
* Max rDS(on) = 1.5Ω at VGS =
* 2.7V, ID =
* 0.25A
* Very l
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