Part number:
FDP3632
Manufacturer:
File Size:
864.79 KB
Description:
N-channel mosfet.
* RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A
* Qg (tot) = 84 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb
* Free and are RoHS Compliant Applications
FDP3632
864.79 KB
N-channel mosfet.
📁 Related Datasheet
FDP3632 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), .
FDP3632 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥100V ·Static drain-source on-resistance:
RDS(on) ≤ 9m.
FDP3651U - N-Channel MOSFET
(Fairchild Semiconductor)
FDP3651U — N-Channel PowerTrench® MOSFET
October 2013
FDP3651U
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
• RDS(on) = 15 mΩ ( Typ.) @.
FDP3651U - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
RDS(on) ≤ 1.
FDP3652 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET
October 2013
FDP3652 / FDB3652
N-Channel PowerTrench® MOSFET
100 V, 61 A, 16 mΩ
Features
Applica.
FDP3672 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP3672 — N-Channel PowerTrench® MOSFET
November 2013
FDP3672
N-Channel PowerTrench® MOSFET
105 V, 41 A, 33 mΩ
Features
• RDS(on) = 25 mΩ ( Typ.) @.
FDP3672 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 105V ·Static drain-source on-resistance:
RDS(on) ≤ 3.
FDP3682 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET
FDB3682 / FDP3682
N-Channel PowerTrench® MOSFET
100 V, 32 A, 36 mΩ
March 2013
Features
• RDS(on) =.
