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HGTG30N60A4D

N-Channel IGBT

HGTG30N60A4D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. Th

HGTG30N60A4D Datasheet (393.03 KB)

Preview of HGTG30N60A4D PDF

Datasheet Details

Part number:

HGTG30N60A4D

Manufacturer:

ON Semiconductor ↗

File Size:

393.03 KB

Description:

N-channel igbt.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices combin.

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HGTG30N60A4D N-Channel IGBT ON Semiconductor

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