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HGTG30N60A4D - N-Channel IGBT

ON Semiconductor

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Datasheet Details

Part number	HGTG30N60A4D
Manufacturer	ON Semiconductor ↗
File Size	393.03 KB
Description	N-Channel IGBT
Datasheet	HGTG30N60A4D-ONSemiconductor.pdf

HGTG30N60A4D Product details

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti.
parallel is the development type TA49373. This IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |