Part number:
HGTG30N60B3
Manufacturer:
File Size:
458.58 KB
Description:
Igbt.
HGTG30N60B3-ONSemiconductor.pdf
Datasheet Details
HGTG30N60B3 Features
* of high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Featu
HGTG30N60B3-ONSemiconductor.pdf
Datasheet Details
HGTG30N60B3
458.58 KB
Igbt.
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