* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The
HGTG30N60C3D Datasheet (425.71 KB)
HGTG30N60C3D
425.71 KB
N-channel igbt.
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device c.
📁 Related Datasheet
HGTG30N60C3 N-Channel IGBT (Intersil Corporation)
HGTG30N60C3D N-Channel IGBT (Intersil Corporation)
HGTG30N60C3D N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60 600V Planar IGBT Chip (Fairchild Semiconductor)
HGTG30N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60A4 N-Channel IGBT (Intersil Corporation)
HGTG30N60A4 SMPS IGBT (ON Semiconductor)
HGTG30N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60A4D N-Channel IGBT (Intersil Corporation)
HGTG30N60A4D N-Channel IGBT (ON Semiconductor)
