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HGTG30N60C3D - N-Channel IGBT

ON Semiconductor

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Datasheet Details

Part number	HGTG30N60C3D
Manufacturer	ON Semiconductor ↗
File Size	425.71 KB
Description	N-Channel IGBT
Datasheet	HGTG30N60C3D-ONSemiconductor.pdf

HGTG30N60C3D Product details

Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti.
parallel with the IGBT is the development type TA49053. This IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |