Datasheet4U Logo Datasheet4U.com

HGTG30N60C3D N-Channel IGBT

📥 Download Datasheet  Datasheet Preview Page 1

Description

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device c.

📥 Download Datasheet

Preview of HGTG30N60C3D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The

HGTG30N60C3D Distributors

📁 Related Datasheet

  • HGTG30N60C3 - N-Channel IGBT (Intersil Corporation)
  • HGTG30N60 - 600V Planar IGBT Chip (Fairchild Semiconductor)
  • HGTG30N60A4 - N-Channel IGBT (Fairchild Semiconductor)
  • HGTG30N60A4D - N-Channel IGBT (Fairchild Semiconductor)
  • HGTG30N60B3 - N-Channel IGBT (Fairchild Semiconductor)
  • HGTG30N60B3D - N-Channel IGBT (Fairchild Semiconductor)

📌 All Tags

ON Semiconductor HGTG30N60C3D-like datasheet