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HGTG7N60A4D N-Channel IGBT

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Description

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60.
Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14.

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Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331.

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