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HGTP12N60A4D, HGTG12N60A4D Datasheet - ON Semiconductor

HGTP12N60A4D N-Channel IGBT

HGTP12N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.

HGTG12N60A4D-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HGTP12N60A4D, HGTG12N60A4D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HGTP12N60A4D, HGTG12N60A4D

Manufacturer:

ON Semiconductor ↗

File Size:

580.48 KB

Description:

N-channel igbt.

Note:

This datasheet PDF includes multiple part numbers: HGTP12N60A4D, HGTG12N60A4D.
Please refer to the document for exact specifications by model.

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HGTP12N60A4D HGTG12N60A4D N-Channel IGBT ON Semiconductor

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