MTB52N06V Datasheet - ON Semiconductor

MTB52N06V Power MOSFET

MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB52N06V Features

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* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTB52N06V 12 36 QT 33 10 30 VGS 27 8 Q1 Q2 24 21 6 18 15 4 12 ID = 52 A 9 2 TJ = 25°C 6 Q3 0 VDS 3 0 0 20 40 60 80 100 120 140 QT, TOTAL CHA

MTB52N06V Datasheet (256.27 KB)