MTB6N60E1 - High Energy Power FET

Name: MTB6N60E1
SKU: MTB6N60E1-965646

ON Semiconductor

The MTB6N60E1 by ON Semiconductor is a High Energy Power FET. Below is the official datasheet preview.

Datasheet Details

Part number	MTB6N60E1
Manufacturer	ON Semiconductor
File Size	204.86 KB
Description	High Energy Power FET
Datasheet	MTB6N60E1-ONSemiconductor.pdf
Additional preview pages of the MTB6N60E1 datasheet.

duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C,.

📁 MTB6N60E1 Similar Datasheet

MTB6N60E - TMOS POWER FET (Motorola)
MTB600N03N3 - 30V N-CHANNEL MOSFET (Cystech Electonics)
MTB60A03KQ8 - Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60B06Q8 - Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60N06HD - TMOS POWER FET (Motorola)
MTB6D0N03AH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)

Other Datasheets by ON Semiconductor

Published: Feb 9, 2016 |