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MTB6N60E1 High Energy Power FET

MTB6N60E1 Description

MTB6N60E1 TMOS E *FET.™ High Energy Power FET D2PAK *SL Straight Lead N *Channel Enhancement *Mode Silicon Gate http://o.

MTB6N60E1 Features

* duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1600 Crss Ciss 800 Coss 0 10 5 Crss 05 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)

MTB6N60E1 Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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High Energy Power FET ON Semiconductor
ON Semiconductor MTB6N60E1-like datasheet