* duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1600 Crss Ciss 800 Coss 0 10 5 Crss 05 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)
MTB6N60E1 Datasheet (204.86 KB)
MTB6N60E1
204.86 KB
High energy power fet.
MTB6N60E1 TMOS E FET.™ High Energy Power FET D2PAK SL Straight Lead N Channel Enhancement Mode Silicon Gate http://o.
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